SiGe Alloys for Electronic Device Applications
نویسندگان
چکیده
منابع مشابه
SiGe heterostructures for FET applications
The high room-temperature carrier mobilities which have recently been observed for both electrons and holes in Si/SiGe heterostructures and the possibility of further improvements offer the prospect of silicon-based field effect transistors (FETs) with performances matching those of bipolar transistors and III–V modulation-doped FETs. In this article the electrical properties of this semiconduc...
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ژورنال
عنوان ژورنال: Journal of the Korean Vacuum Society
سال: 2011
ISSN: 1225-8822
DOI: 10.5757/jkvs.2011.20.2.077